1 ? fn4780.4 is-1009rh radiation hardened 2.5v reference the star*power radiation hardened is-1009rh is a 2.5v shunt regulator diode designed to provide a stable 2.5v reference over a wide current range. the device is designed to maintain stability over the full miitary temperature range and over time. the 0.2% reference tolerance is achieved by on-chip trimming. an adjustment terminal is provided to allow for the calibration of system errors. the use of this terminal to adjust the reference voltage does not effect the temperature coefficient. constructed with the intersil dielectrically isolated ebhf process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. specifications for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical specifications for these devices are contained in smd 5962-00523. pinouts is2-1009rh (to-206ab can) bottom view isye-1009rh (smd.5) bottom view features ? electrically screened to smd # 5962-00523 ? qml qualified per mil-prf-38535 requirements ? radiation environment - total dose . . . . . . . . . . . . . . . . . . . . 300 krad(si) (max) - latch-up immune . . . . . . . . . . . . . dielectrically isolated ? reverse breakdown voltage (v z ) . . . . . . . . . . . . . . . 2.5v ? change in v z vs. current (400 a to 10ma). . . . . . . . 6mv ? change in v z vs. temp (-55c to 125c) . . . . . . . . 15mv ? max reverse breakdown current . . . . . . . . . . . . . . 20ma ? device is tested with 10 f shunt capacitance connected from v+ to v-, which provides optimum stability ? interchangeable with 1009 and 136 industry types applications ? power supply monitoring ? reference for 5v systems ? a/d and d/a reference 2 1 3 v- v+ adj 1 2 3 adj v- v+ ordering information ordering number internal mkt. number part marking temp. range (c) 5962f0052301vxc is2-1009rh-q f00523v -55 to 125 5962f0052301qxc is2-1009rh-8 f00523 01qxc q -55 to 125 5962f0052301vyc ISYE-1009RH-Q q 5962f00 52301vyc -55 to 125 5962f0052301qyc isye-1009rh-8 q 5962f00 52301qyc -55 to 125 is2-1009rh/proto is2-1009rh/ proto is2-1009rh/ proto -55 to 125 isye-1009rh/proto isye-1009rh/ proto islye- 1009rh/proto -55 to 125 data sheet january 27, 2006 caution: these devices are sensitive to electrosta tic discharge; follow proper ic handling procedures. 1-888-intersil or 1-888-468-3774 | intersil (and design) is a registered trademark of intersil americas inc. copyright intersil americas inc. 2000, 2006. star*power? is a trademark of intersil corporation. all rights reserved all other trademarks mentioned are the property of their respective owners.
2 all intersil u.s. products are manufactured, asse mbled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications ca n be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corpor ation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com fn4780.4 january 27, 2006 die characteristics die dimensions 1270 m x 1778 m (50 mils x 70 mils) thickness: 483 m 25.4 m (19 mils 1 mil) interface materials glassivation type: nitride (si 3 n 4 ) over silox (sio 2 ) nitride thickness: 4.0k ? 1.0k ? silox thickness: 12.0k ? 4.0k ? top metallization type: alsicu thickness: 16.0k ? 2k ? substrate ebhf, dielectric isolation backside finish silicon assembly related information substrate potential unbiased (di) additional information worst case current density <1.0 x 10 5 a/cm 2 transistor count 26 metallization mask layout is-1009rh adj v- v+ is-1009rh
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